Abstract
The initial processes of Ge nanocluster formation on Si(110)-16×2 reconstructed structure were investigated via scanning tunneling microscopy. For a small amount of Ge deposited on Si(110)-16×2 single-domain structure at room temperature, the surface structure did not change significantly. After direct current heating at 973K for 20min, the striped structure almost broken and disordered-like structure was formed on the terrace. With increasing the annealing time, the surface structure changed from disordered-like structure to the 16×2 double-domain structure and pyramidal nanoclusters were formed at the domain boundary. These results suggest that the surface stress was induced by Ge nanocluster formation and the double-domain structure was formed in order to relax the stress.
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