Abstract
The interface states induced in metal-oxide-semiconductor (MOS) capacitors by 25-keV electron beam irradiation have been investigated as a function of gate bias and irradiation dose using deep level transient spectroscopy (DLTS). The results clearly reveal the existence of two types of defects. The first type introduces a flat continuum of levels throughout the Si band gap and is not affected by the MOS gate bias. Another type is created only when a positive bias is applied to the MOS gate during irradiation and accounts for an additional broadband of levels in the midgap region. The physical origin of the bias voltage effect on these levels is briefly discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
