Abstract
physica status solidi (a)Volume 73, Issue 1 p. K141-K144 Short Note Change of Dislocation Mobility Characteristics in Silicon Single Crystals at Elevated Temperatures B. Ya. Farber, B. Ya. Farber Institute of Solid State Physics, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorV. I. Nikitenko, V. I. Nikitenko Institute of Solid State Physics, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this author B. Ya. Farber, B. Ya. Farber Institute of Solid State Physics, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this authorV. I. Nikitenko, V. I. Nikitenko Institute of Solid State Physics, Academy of Sciences of the USSR, Chernogolovka Search for more papers by this author First published: 16 September 1982 https://doi.org/10.1002/pssa.2210730168Citations: 34 14432 Chernogolovka, Moscow District, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Citing Literature Volume73, Issue116 September 1982Pages K141-K144 RelatedInformation
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