Abstract
Thin films (0.85μm, 3μm) of Ta2O5 deposited on Si and SiO2 were heated to 900°C. Their reflectance in the infrared was measured using a Fourier transform infrared spectrometer equipped with a multiple angle reflectometer before and after exposure to the high-temperature heat treatment. An interfacial layer (TaSixOy) formed by the diffusion of Si from the substrate into the deposited film was observed using Auger depth profiling, and the effect of this interfacial layer on the reflectance was measured. Using a least squares optimization technique coupled with an optical admittance algorithm, the multiple angle reflectance data were used to calculate the optical constants of the as deposited Ta2O5 film, crystalline Ta2O5, and the interfacial layer in the 1.6 to 10μm range. The interfacial layer formed due to exposure to high temperature was found to be more absorptive than the crystalline Ta2O5.
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