Change in high field Q-slope by baking and anodizing

Abstract

Low temperature RF performance of two niobium cavities that underwent different chemical treatments was measured after they were heat treated at 100 °C for 48 h. After heat treatment cavities were anodized in ammonia hydroxide solution for sequentially increasing voltage until baking effect was gone. The thickness of niobium finally consumed is estimated to be 20 nm. The results are discussed in view of one of the current models for the baking effect on the high field Q-slope.