Change in characteristics of triangular tri-gate FinFET with vertically non-uniform source/drain doping profile

Abstract

A framework for analyzing the effect of a non uniform source/drain (S/D) doping profile on triangular tri-gate FinFET considering the compact modeling is presented. This paper demonstrates a fully physical model for triangular tri-gate leakage distribution due to variation of S/D doping. Fixed S/D doping can remarkably suppress short channel effect which is responsible for sub-threshold conduction. The proposed model predicts that the non uniform doping increases short channel effect as well as sub-threshold conduction and due to which a large increase in leakage current is obtained. We also investigated the impact of S/D doping on geometrical parameters such as fin height and fin width. Using Monte Carlo simulation a random variation of leakage current associated with parameter variation can be found that also predicts the dependency of leakage current on threshold voltage.