Abstract
The role of crystal defects in wide bandgap semiconductors and dielectrics under extreme environments (high temperature, high electric and magnetic fields, intense radiation, and mechanical stresses) found in power electronics is reviewed. Understanding defects requires real-time in situ material characterization during material synthesis and when the material is subjected to extreme environmental stress. Wide bandgap semiconductor devices are reviewed from the point of view of the role of defects and their impact on performance. It is shown that the reduction of defects represents a fundamental breakthrough that will enable wide bandgap (WBG) semiconductors to reach full potential. The main emphasis of the present review is to understand defect dynamics in WBG semiconductor bulk and at interfaces during the material synthesis and when subjected to extreme environments. High-brightness X-rays from synchrotron sources and advanced electron microscopy techniques are used for atomic-level material probing to understand and optimize the genesis and movement of crystal defects during material synthesis and extreme environmental stress. Strongly linked multi-scale modeling provides a deeper understanding of defect formation and defect dynamics in extreme environments.
Highlights
One of the most significant challenges for materials technology in the 21st century pertains to the excited state characteristics of crystal defects present in semiconductor and dielectric materials used for energy conversion devices [1,2,3,4]
The present study shows that what is lacking is the fundamental understanding of the role that crystal defects play when wide bandgap (WBG)
If the semiconductor contains a high density of crystal defects, as is the case with wide bandgap (WBG) semiconductors, minority carrier recombination is adversely affected [21,22]
Summary
One of the most significant challenges for materials technology in the 21st century pertains to the excited state characteristics of crystal defects present in semiconductor and dielectric materials used for energy conversion devices [1,2,3,4] These high-voltage and high-power switching devices experience extreme electrical and thermal stresses because of inherent high electric fields and high currents generated during their operation. The semiconductor and dielectric materials used in the construction of power electronic switching devices experience extreme electrical and thermal stresses during the on-state as well as when switching high voltages and high currents.
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