Abstract
Plasma etch processes for fabrication of contact holes in SiO2 with aspect ratios of 20:1 and beyond were successfully developed. Both etch rates and profile control mechanisms were investigated in depth. Profile bowing, potato-shaped cross-sections, and increase of length to width ratio were identified to be the limiting factors in patterning of high aspect ratio holes in SiO2. Solutions for bow reduction and the handling of length to width ratio were developed and successfully implemented.
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