Abstract
AbstractWe propose a new strategy for in‐situ observation of dopant activation process using scanning tunnelling microscopy (STM) technology. Two factor techniques are established within our original STM system combined with liquid‐metal‐ion‐source ion‐gun (LMIS‐IG/STM): (1) in‐situ real‐time observation of Si(001)‐2×1 surface modified with dopant ions, and (2) in‐situ hydrogen passivation of Si(001)‐2×1 surface. Sequential STM images of the surface morphological changes are successfully obtained with keeping the original observation area. The hydrogenated Si(001)‐2×1 surface is stable enough even under the degraded vacuum conditions which are unavoidable in ion irradiation processes. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
