Abstract
In order to reduce the reset current of chalcogenide random accessmemory, a W sub-microtube heater electrode with outer/inner diameter of260/100 nm, which was fabricated with standard 0.18-μm technology, isproposed for the first time to achieve a reset current of about 0.5 mA.The reasons may be that sub-microtube increases the number of electrodeedge and thermal efficiency is improved greatly because the thermaldensity on the edge of sub-microtube electrode is generally thehighest.
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