Abstract
Plasma etching for surface indium oxide removal by methane/argon/hydrogen/sulfur hexafluoride (CH4/Ar/H2/SF6) mixture has been implemented. The morphology of the indium bumps was not deteriorated after the plasma etching. High-resolution O 1s x-ray photoelectron spectroscopy (XPS) proved that the In–O component decreased from 44.5% for the nonetched sample to 10.8% for the sample after plasma etching. The surface modification of the indium bumps might be in the form of doped fluorine according to the XPS results. The zero-bias resistance derived from current–voltage (I–V) measurements for plasma-etched infrared detectors was comparable to that for nonetched ones, indicating that such plasma treatment is suitable for processing sensitive materials such as mercury cadmium telluride.
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