Abstract
The effect of electron cyclotron resonance (ECR) plasma etching using CH4/H2/Ar on Si δ-doped pseudomorphic AlGaAs/InGaAs/GaAs heterostructures and field-effect transistors has been investigated. Hall measurements were performed as a function of temperature (5–300 K) and the Hall mobility and the sheet density compared to wet chemically etched reference samples. Direct current and high-frequency measurements were performed on dry gate-recessed PMHFETs.
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