Abstract

Formamidinium lead iodide (FAPbI3) is the most promising perovskite material for producing efficient perovskite solar cells (PSCs). Here, we develop a facile method to obtain an α-phase FAPbI3 layer with passivated grain boundaries and weakened non-radiative recombination. For this aim, during the FAPbI3 fabrication process, cetrimonium bromide + 5% potassium thiocyanate (CTABr + 5% KSCN) vapor post-treatment is introduced to remove non-perovskite phases in the FAPbI3 layer. Incorporation of CTA+ along with SCN- ions induces FAPbI3 crystallization and stitch grain boundaries, resulting in PSCs with lower defect losses. The vapor-assisted deposition increases the carriers' lifetime in the FAPbI3 and facilitates charge transport at the interfacial perovskite/hole transport layer via a band alignment phenomenon. The treated α-FAPbI3 layers bring an excellent PCE of 22.34%, higher than the 19.48% PCE recorded for control PSCs. Besides, the well-oriented FAPbI3 and its higher hydrophobic behavior originating from CTABr materials lead to improved stability in the treated PSCs.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.