Abstract
NAND flash suffers from program interference and retention errors, which negatively affect its reliability. Existing schemes preprocess raw data before writing them to reduce Raw Bit Error Rate (RBER) and leverage ECCs (such as LDPC codes) to reduce Uncorrectable Bit Error Rate (UBER). Prior arts failed to take into account the counteractions between the program interference and retention errors.Thus, they may lead to sub-optimal error avoidance. Besides, after the preprocessing procedure, data randomness may be affected. Since NAND flash shows numerical-correlated error characteristics, there's a potential to provide such information to LDPC codes to further improve performance. In this article, we propose a holistic strategy consisting of two coupled procedures to enhance flash reliability. First, we use our previously proposed CeSR strategy to reduce RBER. Second, we improve the existing LDPC codes and name it Assisted LDPC strategy to reduce UBER. The Assisted LDPC is deeply coupled with CeSR. It leverages the data pattern after CeSR to improve the decoding success rate and accelerate the decoding procedure. The evaluation shows that compared with the state-of-the-art NRC strategy, CeSR can reduce the RBER of hot and cold data by up to 20.30% and 85.13%, respectively. Besides, compared with the traditional LDPC, the Assisted LDPC decoding strategy can increase the decoding success rate by up to 97% for cold data and reduce the average decoding iteration number of MSB pages for hot and cold data by up to 31.6% and 73.9%, respectively.
Highlights
With the emergence of multi-level storage technology and the reduction of feature size, the density of NAND flash has been greatly increased
AND MOTIVATION we introduce the NAND flash error model used in our work and the traditional LDPC decoding procedure
In this article, we propose a holistic strategy based on the error tendency analysis of cells in different states to enhance the reliability of MLC NAND flash
Summary
With the emergence of multi-level storage technology and the reduction of feature size, the density of NAND flash has been greatly increased. The improvement of NAND flash memory density comes at the cost of reduced reliability. The data value of an MLC NAND flash memory cell can be ‘‘11,’’ ‘‘10,’’ ‘‘00’’ and ‘‘01,’’ as the Vth increases from low to high. Program interference and retention errors are the two dominant types of error in NAND flash [2]–[4]. They are both caused by the Vth shift. Electrons inside a flash memory may leak, which will reduce the cell’s Vth and cause retention.
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