Abstract
AbstractQuantum light sources are key building blocks of photonic quantum technologies. For many applications, it is of interest to control the arrival time of single photons emitted by such quantum devices, or even to store single photons in quantum memories. In situ electron beam lithography is applied to realize InGaAs quantum dot (QD)‐based single‐photon sources, which are interfaced with cesium (Cs) vapor to control the time delay of emitted photons. Via numerical simulations of the light–matter interaction in realistic QD‐Cs‐vapor configurations, the influence of the vapor temperature and spectral QD‐atom detuning is explored to maximize the achievable delay in experimental studies. As a result, this hybrid quantum system allows to trigger the emission of single photons with a linewidth as low as 1.54 GHz even under non‐resonant optical excitation and to delay the emission pulses by up to (15.71 ± 0.01) ns for an effective cell length of 150 mm. This work can pave the way for scalable quantum systems relying on a well‐controlled delay of single photons on a time scale of up to a few tens of nanoseconds.
Highlights
Quantum light sources are key building blocks of photonic quantum photons and the storage of quantum information are highly relevant to facilitechnologies
The generaspectral quantum dot (QD)-atom detuning is explored to maximize the achievable delay in experimental studies
This hybrid quantum system allows to trigger the emission of single photons with a linewidth as low as 1.54 GHz even under non-resonant optical excitation and to delay the emission pulses tion of slow light by means of light–matter interaction in an atomic ensemble of alkali atoms has been known for several decades.[10]
Summary
The goal to interface QDs and atomic vapors with dissimilar optical properties, for instance in terms of transition linewidths, sets stringent demands on the quality and emission features of the solid-state-based single-photon emitters. Based on this customized system, the deterministic fabrication process starts with CL mapping of about 50 μm × 50 μm write fields of the above-described QD-sample to identify suitable QDs based on their emission intensity and wavelength, which are required to match the target transitions of the Cs vapor near the D1 line at 894.59296 nm in vacuum.[22] Prior to the in situ EBL process, the sample is spin-coated with an 85 nm thick layer of CSAR resist, which is exposed homogenously during the CL mapping by an electron beam dose of 2.5 mC cm−2.
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