Abstract
We investigated the work function (WF) change of a silicon surface being under cesium ion bombardment and simultaneous oxygen flooding with various oxygen pressures at the sample surface. It was found that WF of Cs + ion sputtered Si decreases under oxygen flooding. This decrease provides an essential grow of secondary ion yields of some negative ions, sputtered from Si. At the same time Si − ion yield decreases approximately in two times. In the paper we have discussed possible explanations of our experimental data: we considered a surface composition change, formation of surface dipoles and work function change caused by oxygen adsorption, and their relationships between each other.
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