Abstract
Epitaxial CeO2 films with different thickness were grown on Y2O3 stabilised Zirconia substrates. Reduction of cerium ions at the interface between CeO2 films and yttria stabilised zirconia substrates is demonstrated using aberration-corrected scanning transmission electron microscopy combined with electron energy-loss spectroscopy. It is revealed that most of the Ce ions were reduced from Ce4+ to Ce3+ at the interface region with a decay of several nanometers. Several possibilities of charge compensations are discussed. Irrespective of the details, such local non-stoichiometries are crucial not only for understanding charge transport in such hetero-structures but also for understanding ceria catalytic properties.
Highlights
Epitaxial CeO2 films were grown on Y2O3-stabilized zirconia (YSZ) (111) substrates using pulsed laser deposition
Epitaxial CeO2 films were grown on YSZ (111) substrates using pulsed laser deposition
TEM samples in cross-sectional geometry were prepared by the tripod polishing technique followed by Ar+ ion-milling while cooling the specimen with liquid nitrogen
Summary
Epitaxial CeO2 films were grown on YSZ (111) substrates using pulsed laser deposition. TEM samples in cross-sectional geometry were prepared by the tripod polishing technique followed by Ar+ ion-milling while cooling the specimen with liquid nitrogen. Reduction of cerium ions at the interface between CeO2 films and YSZ substrates is demonstrated using aberration-corrected scanning transmission electron microscopy combined with electron energy-loss spectroscopy.
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