Central-cell corrections and shallow donor states in strong magnetic fields

Abstract

Ionization energies and the central-cell corrections have been calculated for a few shallow donors in Si, GaP, and GaAs. We have assumed a short range potential with two parameters for the strength and the range for each donor, representing the central-cell effects. These parameters are fixed using the experimentally available ionization energies for each donor in a semiconductor. In the presence of a magnetic field the donor ionization energies are estimated using a variational procedure. Our results show that the ionization energies and the central-cell corrections increase with magnetic field. Our results are compared for GaAs with the recent work by Heron et al. [R. J. Heron, R. A. Lewis, P. E. Simmonds, R. P. Starret, A. V. Skougarevsky, R. G. Clark, and C. R. Stanley, J. Appl. Phys. 85, 893 (1999)].