Abstract
We have studied the competition between the growth direction applied magnetic field and the central barrier width effects on the conduction-electron Landé g ∥ factor in GaAs-(Ga,Al)As double quantum wells. Numerical calculations are performed by using the Ogg–McCombe effective Hamiltonian, which includes nonparabolicity and anisotropy effects for the conduction-band electrons. The system is assumed to consist of a two GaAs quantum wells coupled by a Ga 0.65Al 0.35As barrier, and surrounded by Ga 0.65Al 0.35As material. Theoretical results are given as functions of the central barrier and well widths, at different applied magnetic fields, for various Landau levels. Our results compare well with previous theoretical and experimental findings in the bulk limit of both GaAs and Ga 0.65Al 0.35As materials.
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