Abstract
On the purpose to get large sized BiSeI crystals for diverse applications based on its physical properties, such as thermoelectric, photoelectric and ferroelectric, etc. We developed a synthesis process to obtain pure BiSeI polycrystal, which was used as source material for further physical vapor transport (PVT) growth of BiSeI single crystal. Strip-shaped BiSeI single crystal with the size of ∼80 × 4 × 0.5 mm3 was obtained. Needle-like and layered microstructures with homogeneous composition were observed in BiSeI crystal by the SEM. The band-gap of as-grown BiSeI crystal was estimated to be ∼1.29 eV according to the UV–Vis diffuse reflectance spectra. Hall measurement shows that BiSeI single crystal is n-type conductivity with the anisotropic resistivity of 39.3, 3.4, and 1650.4 Ω·cm along a-, b- and c-axis, respectively.
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