Abstract
The centimeter-scale laser lift-off (LLO) of a UVB laser diode structure on nano-patterned AlN was demonstrated by using a 257 nm pulsed laser. The mechanism of this LLO, which can be used for vertical light-emitting device fabrications, was analyzed in detail from the structural and optical properties. The large-area high-yield LLO without cracks was found to be enabled by taking advantage of the intentional in-plane periodic and nanometer-scale inhomogeneous distribution of the AlN molar fraction in the AlGaN layer introduced by growing AlGaN on nano-patterned AlN.
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