Abstract
Extending the simulation of anisotropic etching, a cellular-automata-based simulator is applied to anisotropic crystal growth. This simulator takes advantage of the equivalence between dissolution and growth of crystals. Metalorganic vapour-phase epitaxial growth experiments were performed on patterned (1 0 0)-oriented InP substrates with very deep V-shaped grooves with {1 1 1}A sidewalls to determine the relevant growth rates of InGaAs and InP. The capability of the simulation method is demonstrated by quantitative comparison of simulated and experimental results. In addition, the versatility of the model is shown with area-selective growth.
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