Abstract
A solar cell is a large area device, and thus its global IV-characteristic and efficiency depend strongly upon its local properties. Local defects, such as a locally reduced diffusion length, a strong local shunt resistance or a high local series resistance will adversely influence the cell’s global properties. Experimental techniques suitable for mapping the spatial distribution of such local parameters can provide valuable information, and thus help to improve the technology for the production of efficient and reproducible solar cells. The LBIC (Light Beam Induced Current) technique [1] allows calculation of the local diffusion length of the solar cell material from local photocurrent data obtained under short-circuit conditions. As well as allowing LBIC measurements, the PVScan 5000 mapping analyzer by NREL [2] can be used to map defects and grain boundaries using reflectivity data and special surface etching. Localized shunts can be mapped by CCD cameras [3,4] or nematic liquid crystals [5]. The electron-beam-induced current (EBIC) is an alternative technique for the investigation of defects in solar cells [6]. Destructive techniques, MASC [7] for local IV-characterisation and RAMP [8] using a scanning (by scratching) tungsten electrode, have also recently been developed.
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