Ce-doped ZnO (CexZn1−xO) becomes an efficient visible-light-sensitive photocatalyst by co-catalyst (Cu2+) grafting

Abstract

We have fabricated an efficient visible-light-sensitive Cu(2+)-grafted Ce-doped ZnO photocatalyst (Cu(2+)-Ce(x)Zn(1-x)O) by adopting a metal ion doping and co-catalyst modification. Impurity states were formed below the conduction band (CB) edge in Ce(x)Zn(1-x)O, and these impurity states induce the visible-light absorption. Ce(x)Zn(1-x)O without a Cu(2+)-co-catalyst showed negligible visible-light activity due to the low reduction power of electrons in impurity levels. Surprisingly, Cu(2+)-modification over Ce(x)Zn(1-x)O drastically increased its visible-light activity. Excited electrons in impurity states can transfer to the Cu(2+)-ions on the surface and form Cu(2+)/Cu(+) redox couples, which cause the efficient oxygen reduction through a multi-electron reduction process. One of the striking features of the present study is that the metal doped semiconductors which were inactive due to their impurity states become efficient visible-light photocatalysts upon co-catalyst modification. The successful strategy used here for designing a highly active visible-light photocatalyst would provide numerous opportunities to develop an efficient metal-ion based visible-light photocatalyst.