Abstract
Films of cerium hexaboride, a material promising for use in thermoelectric devices at liquidhelium temperatures, are produced by electron-beam deposition. Deposition is carried out from ceramic targets onto insulator, semiconductor, and metal substrates at different temperatures. The microstructure, the elemental and phase compositions, the temperature dependences of the resistivity and the Seebeck coefficient are thoroughly studied. CaB6-structured films, for which the structure is characteristic of cerium hexaboride and the elemental composition is close to the stoichiometric composition, are obtained. At low temperatures, the resistivity of the films is somewhat higher than that of single-crystal samples, and the Seebeck coefficient is close to the corresponding coefficient for single-crystal samples. The main cause of the difference between the resistance values is a high concentration of oxygen impurity detected in the films.
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