Abstract
We attempted Ce doping in La 2CuO 4 with the K 2NiF 4 ( T) structure by molecular beam epitaxy. At low growth temperature and with an appropriate substrate choice, we found that Ce can be incorporated into the K 2NiF 4 lattice up to x ∼ 0.06, which had not yet been realized in bulk synthesis. The doping of Ce makes T-La 2− x Ce x CuO 4 more insulating, which is in sharp contrast to Ce doping in La 2CuO 4 with the Nd 2CuO 4 structure, which makes the compounds superconducting. The observed smooth increase in resistivity from hole-doped side ( T-La 2− x Sr x CuO 4) to electron-doped side ( T-La 2− x Ce x CuO 4) indicates that electron–hole symmetry is broken in the T-phase materials.
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