Abstract
The spinel Ce-doping MnCo2O4 (MCO) thin films were fabricated on Pt/Ti/SiO2/Si substrates for resistive switching (RS) layer using sol-gel spin-coating deposition method. The Pt/Mn0.925Ce0.075Co2O4/Pt (Pt/7.5MCC/Pt) device exhibits stabler and superior bipolar RS performance, the concentrated distribution of Reset/Set voltage as low as – 0.62/1.175 V, good cycle endurance and excellent time retention capability. The improvement in the RS performance of the Pt/7.5MCC/Pt devices can be attributable to the effective limitation of the random formation and rupture of conductive filaments by appropriate Ce doping. The carrier transport mechanism of the device at high resistance state can be dominated by the Schottky emission, whereas the carrier transport mechanism at low resistance state consistent with the Ohmic conduction. This work provides a potential performance improvement approach to design the resistive memory devices for data storage applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
