Abstract
Photoemission spectroscopy was used to investigate the initial oxidation of the Ce/Ta(110) interface at room temperature. The oxidation of Ta(110) is dramatically enhanced by a thin Ce overlayer. A Ta suboxide TaO{sub {chi}} (0.5{le}{chi}{le}1) is formed first in the interface, followed by the rapid formation of Ta{sub 2}O{sub 5} upon further oxygen exposure. A weak interface reaction exists in Ce/Ta(110), but is excluded as the main cause of the catalytic oxidation. An earlier suggestion is reconfirmed that the Ce layer converts O{sub 2} to oxygen ions and thus promotes the oxidation of the substrate.
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