CdTe(111) growth on misoriented Si(100) substrates by hot-wall epitaxy

Abstract

CdTe(111) layers were grown directly on misoriented Si(100) substrates by hot-wall epitaxy. The structure and crystallinity of the layer were examined by reflection high-energy electron diffraction (RHEED), etch-pit observation and X-ray diffraction measurements. The strain in the layer was investigated by X-ray Bond method. The layers on misoriented Si(100) substrates are composed of twinted domains elongated parallel to the misoriented direction of the substrates. A 5 μm thick layer was deformed by biaxial tensile stress by the difference between thermal expansion coefficients of CdTe and Si. The strain is relaxed as the layer thickness increases.