Abstract
CdTe films were grown onto amorphous substrates by electron beam deposition (EB) and by horizontal and vertical physical vapor deposition (HPVD and VPVD). The films were characterized by X-ray diffraction, scanning electron microscopy (SEM) and by measuring their electrical resistivity and response to X-rays. A 4-μm-thick layer deposited by EB had uniform grain size, preferred growth orientation of (1 1 1). However, the films did not have any response to X-rays since the resistivity of the layer was only 10 4 Ω cm. The grain distribution, grain size and roughness of films grown by HPVD were nonuniform. VPVD gave uniform films 35 to 150 μm thick, grain size between 5 and 25 μm, preferred growth orientation of (1 1 1), resistivity of 10 6 Ω cm and linear response to X-rays. Correlations between texture and grain size with substrate temperature were established.
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