CdTe-Ge Melt Structure Rearrangement Study

Abstract

Electrical conductivity σ(T) and thermoelectric power S(T) for undoped CdTe and for CdTe doped by 2 mol% Ge, were measured at high Ar pressure up to 1825 and 1525 K, correspondingly. While the a(T) dependencies of both melts indicate their semiconducting behaviour with similar parameters, the S(T) curves revealed a tendency to metalization at 1400 ± 20 K for the pure CdTe melt. The Ge presence prevents the latter process though the critical point where the S(T) dependence changes its slope, demonstrating a structure change of the melt, is the same as for pure CdTe melt. The CdTe + Ge melt shear viscosity measurements upon moderate pressure up to 1400 K gave the possibility to obtain evidence of a finer structure rearrangement of the melt near 1376 and 1400 K.