Abstract
The diffusion-controlled electrodeposition process of cadmium telluride from chlorine-containing solutions of CdSO4 and the films' structure and electrical properties are studied. The effect of deposition at different temperatures (25-85 °C) and at different cathode potentials (-580 to -610 mV, versus Ag/AgCl) on the films' structure is investigated. Photo-induced current transient spectroscopy of bandgap energy levels has revealed the presence of a few shallow hole traps, which do not exist in films prepared from Cl-free solutions, and, thus, are related to chlorine/structural defect complexes. Due to the presence of the shallow hole traps, the electrical properties of these films and the charge transport mechanism in Au-CdTe devices are remarkably different from those in films deposited from Cl-free solutions. The spectral response of the photocurrent reveals a direct bandgap energy of 1.460 eV at 300 K, which is about 30 meV smaller than the bandgap in films prepared from Cl-free solutions.
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