Abstract
The growth and structural characterization of CdTe epitaxial films on GaAs(100) substrates are reported. The samples were obtained by a novel isothermal closed space sublimation (ICSS) technique, which was previously used for the growth of ZnTe in atomic layer epitaxy regime. For growing the films, a GaAs substrate is exposed alternately to the elemental sources (Cd and Te) at isothermal conditions employing a closed space geometry. The influence of the growth parameters on the composition and the thickness of the films is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.