Abstract
The growth and structural characterization of CdTe epitaxial films on GaAs(100) substrates are reported. The samples were obtained by a novel isothermal closed space sublimation (ICSS) technique, which was previously used for the growth of ZnTe in atomic layer epitaxy regime. For growing the films, a GaAs substrate is exposed alternately to the elemental sources (Cd and Te) at isothermal conditions employing a closed space geometry. The influence of the growth parameters on the composition and the thickness of the films is discussed.
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