Abstract
This study investigated the properties of a photoanode fabricated by depositing a p-type CdTe thin film on a CdS-coated FTO substrate (CdTe/CdS/FTO) via close-space sublimation. This CdTe/CdS/FTO electrode was found to work as a photoanode with a long absorption edge wavelength of 830 nm. In a CdTe-based photoanode such as this, the p-n junction formed at the CdTe/CdS interface promotes charge separation of photoexcited carriers and forces photogenerated holes to move toward the photoanode surface to promote oxidation reactions on the electrode surface. A MoOx buffer layer was also found to play a crucial role in facilitating the transfer of photogenerated holes to surface reaction sites through decreasing the energy barrier at the interface between the CdTe and a surface protective layer. A biphotoelectrode photoelectrochemical cell composed of a CdTe-based photoanode and a CdTe-based photocathode exhibited a solar-to-hydrogen conversion efficiency of 0.22% without an external voltage in response to illumination by AM 1.5G light.
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