Abstract
CdS 0.4 Se 0.6 nanocrystals have been formed through nucleation and growth processes during heat treatments at different temperakres (T=600, 675 and 700 o C) and annealing times (t=1 hour to 8 days). A regime of nucleation and growth seems to occur at T=600 o C. The growth process is dominant at T=675 and 700 o C. The average size of the semiconductor particles ranges between 2 and 15 nm according to the temperature and annealing time. Structural and interfacial aspects of the particles at early stages of the growth are presented here
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