Abstract
We have investigated magneto-optical properties of a series of CdSe self-assembled quantum dots (QDs) grown on the Zn 1− x Mn x Se diluted magnetic semiconductors (DMSs). The QDs are formed by depositing 2.5 ML CdSe layer on 1 μm thick Zn 1− x Mn x Se buffer layer prepared by molecular beam epitaxy (MBE). The Mn concentration x in the Zn 1− x Mn x Se buffer was varied from 0.05 to 0.25. The photoluminescence (PL) peaks from CdSe QDs and from Zn 1− x Mn x Se barrier are clearly observed at zero magnetic field. The PL position of CdSe QDs appears to be systematically shifted toward low energy with increasing Mn concentration in the Zn 1− x Mn x Se buffer layer. The PL intensity ratio of CdSe QDs with respect to the Zn 1− x Mn x Se barrier also monotonically increases with Mn concentration x. This systematic behavior observed in the series of CdSe/Zn 1− x Mn x Se QD systems indicates that the CdSe QD formation strongly depends on the Mn concentration of the Zn 1− x Mn x Se buffer layer. The observed large Zeeman shift of the QD system in the presence of magnetic field was discussed in terms of the wavefunction overlap of carriers with Mn ions in the barrier.
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