Abstract
AbstractWe report on our development of fabrication of CdSe QD in ZnSe nanowire. We have been able to obtain high quality structures with very good optical properties. This has allowed us to measure photon emission from single quantum dots and to demonstrate photon antibunching. We show that this new type of II–VI quantum dot is very promising for high temperature operation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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