Abstract
This paper reports experimental results on the speed of response characteristics of CdS thin films implanted with Bi ions at 30 keV with doping densities varying from 10 13 to 10 15 ions cm -2. It is reported herein that the speed of response decreases with decreasing light intensity for the implanted CdS thin films and time constants increase with increasing doping densities. A wavelength dependence of the speed of response was experimentally observed. The trap distribution is found to be nearly linear in a shallow depth below the conduction band.
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