Abstract
Cadmium sulphide finds extensive applications in a variety of optoelectronic devices. CdS, with a band gap of 2.43 eV, is a suitable window material in heterojunction solar cells that employ CdTe, Cu 2S or CuInSe 2 as an absorber. Polycrystalline films of CdS, thickness ∼15 μm, were grown onto chemically clean and optically plane glass substrates by sintering process. A 10 min sintering time and 500°C sintering temperature were found to be optimum. As deposited films were characterized through optical, structural and electrical transport properties using optical reflection spectroscopy, X-ray diffractometry and I– V characteristics techniques.
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