CdS/Si nanofilm heterojunctions based on amorphous silicon films: Fabrication, structures, and electrical properties* *Project supported by the Natural Science Foundation of Henan Province, China (Grant No. 202300410304) and the Key Research Project for Science and Technology of the Education Department of Henan Province, China (Grant No. 21A140021).

Abstract

Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction. The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and CdS nanofilms on the ITO glass in turn. The relation of current density to applied voltage (I–V) shows the obvious rectification effect. From the analysis of the double logarithm I–V curve it follows that below ∼ 2.73 V the electron behaviors obey the Ohmic mechanism and above ∼ 2.73 V the electron behaviors conform to the space charge limited current (SCLC) mechanism. In the SCLC region part of the traps between the Fermi level and conduction band are occupied, and with the increase of voltage most of the traps are occupied. It is believed that CdS/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.