CdS quantum dots: growth, microstructural, optical and electrical characteristics

Abstract

Cadmium sulfide (CdS) quantum dots (QDs) with cubic phase were prepared using simple precursors by chemical precipitation technique, and their thin films were grown on glass substrates by chemical bath deposition. The obtained quantum dots were characterized for their structural, morphological, optical, thermal and electrical properties using X-ray diffraction (XRD), field emission transmission electron microscopy, UV–visible absorption spectroscopy, Raman spectroscopy, photoluminescence, thermogravimetric analysis/differential thermal analysis and low-temperature electrical transport measurements, respectively. XRD pattern reveals that the prepared CdS QDs are highly pure and crystalline in nature with cubic phase. The average particle size, estimated to be ~2 nm, is almost in agreement with the values calculated by Brusis formula. Selected area electron diffraction also recognizes the cubic structure of CdS quantum dots. The UV–visible spectra exhibit a blueshift with respect to that of bulk sample which is attributed to the quantum size effect of electrons and holes. The band gap of CdS QDs is calculated from absorption data using Tauc plot and found to be 2.84 eV. Energy-dispersive X-ray analysis reveals the presence of Cd and S in almost stoichiometric ratio in the prepared CdS QDs. Micro-Raman spectroscopic studies also yield convincing evidence for the transformation of structure. The emission spectra of CdS QDs show peak centered at 541 nm, which is attributed to the presence of cadmium vacancies in the lattice. The DC resistivity data at low temperatures are qualitatively consistent with the variable-range hopping model, and the density of states at the Fermi level is determined.