CdS-Nanowires Flexible Photo-detector with Ag-Nanowires Electrode Based on Non-transfer Process.

Yanli Pei,Yuhao Wang,Ling Liu,Xiaoci Liang,Ruihan Pei,Jun Liang,Haibiao Chen

doi:10.1038/srep21551

Yanli Pei, Yuhao Wang + Show 5 more

Open Access

https://doi.org/10.1038/srep21551

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Abstract

In this study, UV-visible flexible resistivity-type photo-detectors were demonstrated with CdS-nanowires (NWs) percolation network channel and Ag-NWs percolation network electrode. The devices were fabricated on Mixed Cellulose Esters (MCE) membrane using a lithographic filtration method combined with a facile non-transfer process. The photo-detectors demonstrated strong adhesion, fast response time, fast decay time, and high photo sensitivity. The high performance could be attributed to the high quality single crystalline CdS-NWs, encapsulation of NWs in MCE matrix and excellent interconnection of the NWs. Furthermore, the sensing performance was maintained even the device was bent at an angle of 90°. This research may pave the way for the facile fabrication of flexible photo-detectors with high performances.

Highlights

In recent years, wearable electronic devices have been growing rapidly, such as smart watches, smart glasses and wearable cameras, due to the significant applications of health monitoring[1,2]
We developed a simple but efficient method to produce high performance flexible photo-detectors based on CdS-NWs network channel and Ag-NWs network electrode
The patterns of CdS-NWs and Ag-NWs were fabricated on the Mixed Cellulose Esters (MCE) filter membrane using a lithographic filtration method

Summary

Introduction

Wearable electronic devices have been growing rapidly, such as smart watches, smart glasses and wearable cameras, due to the significant applications of health monitoring[1,2]. Using the single nanowire or nanobelt, the field transistor type CdS photo-detectors have been demonstrated with very high sensitivity[13,14,15]. These transistor type photo-detectors require complicated fabrication process including fabrications of back gate electrode, gate dielectric, single nanostructure channel and S/D electrodes. Being the sensing channel, using Ag-NWs with high conductivity and flexibility as the conducting electrode is critical for wearable photo-electronics application. Flexible resistivity-type photo-detectors based on CdS-NWs percolation network channel and Ag-NWs percolation network electrode were fabricated using a facile non-transfer method. The sensing performance was maintained even the device was bent at an angle of 90°

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Results

Conclusion