Abstract
The evolution of the CdS/Cu(In,Ga)Se2 interface in high-efficiency thin film solar cells was monitored by chemically sensitive x-ray emission spectroscopy as a function of CdS chemical bath deposition time. We find direct experimental evidence that, in the initial deposition steps, the sulfur atoms on the Cu(In,Ga)Se2 surface exist in at least two distinct chemical environments, namely CdS and a compound involving Ga and In. The findings indicate the complexity of the CdS/Cu(In,Ga)Se2 interface structure at the atomic scale.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
