Abstract
Cadmium telluride films were deposited from a CdTe target using rf planar magnetron system on CdS/ITO/Glass substrates. The as grown films were polycrystalline and consisted of closepacked array of preferentially oriented single crystal grains. Chemical heat treatment using cadmium chloride was used to form the junction between cadmium sulphide and cadmium telluride layers. It also improves the structure of the sputtered CdTe film and the lifetime of carriers.
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