Abstract
The two-dimensional heterostructure nanobelts with a central CdSe region andlateral CdS structures are synthesized by a two-step physical vapor transportmethod. The large growth rate difference between lateral CdS structures on both ± (0001) sidesof the CdSe region is found. The growth anisotropy is discussed in terms of the polar nature of theside ± (0001) surfaces of CdSe. High-resolution transmission electron microscopy reveals the CdSe centralregion covered with non-uniform CdS layer/islands. From micro-photoluminescencemeasurements, a systematic blueshift of emission energy from the central CdSe region inaccordance with the increase of lateral CdS growth temperature is observed. This resultindicates that the intermixing rate in the CdSe region with CdS increases with the increaseof lateral CdS growth temperature. In conventional CdSSe ternary nanostructures,morphology and emission wavelength were correlated parameters. However, the morphologyand emission wavelength are independently controllable in the CdS/CdSe lateralheterostructure nanobelts. This structure is attractive for applications in visibleoptoelectronic devices.
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