Abstract
CdS/CdSe core/shell nanowall arrays are fabricated by a two-step chemical solution method for use in photoelectrochemical sensors. The morphology of the CdS nanowall arrays and contact behavior with substrate can be controlled through varying the solution concentration. A uniform CdSe layer is deposited on the CdS nanowall arrays by a successive ionic layer adsorption and reaction method, and the thickness of CdSe layer can be effectively controlled by changing deposition cycles. It is demonstrated that the light absorption range of the CdS/CdSe core/shell nanowall arrays can almost be extended to the whole visible region. The obviously enhanced photoelectrochemical current for the heterojunction nanowalls is found under illumination of the simulated sunlight compared with that for the bare CdS nanowalls, which increases from 3.78mA/cm2 to of 8.3mA/cm2. The results indicate that a suitable combination of band gap and band alignment can constitute a promising system for a high efficient photoelectrochemical sensor.
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