Abstract
In this study, Cd1−xZnxSySe1−y (0 ≤ x = y ≤ 0.35) photoelectrodes are deposited via inexpensive facile chemical bath deposition. The effects of Zn and S doping on the compositional, microstructural, electrical, and optical properties of thin films were analysed. The electrochemical photovoltaic (EPV) cell of configuration Cd1−xZnxSySe1−y/0.25M sulfide/polysulfide/C was assembled to examine the different performance parameters in light and in dark conditions. An EPV cell fabricated with the Cd1−xZnxSySe1−y (0 ≤ x = y ≤ 0.075) photoelectrode exhibited a maximum photoconversion efficiency of 3.18%. This performance can be attributed primarily to the enhanced light-absorption ability of the material because of the enhanced rough microstructure and low recombination of photo-injected electrons with the electrolyte. The photovoltaic (PV) performance is significantly enhanced after doping CdSe with Zn and S.
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