Abstract
AbstractThe substitution of surface Cd atoms by Zn atoms during the growth of CdxZn1–xTe by atomic layer epitaxy has been studied as a function of substrate temperature and Zn exposure time by means of the analysis of the photoluminescence spectra of CdxZn1–xTe/ZnTe quantum wells. For substitution and desorption of Cd induced by Zn exposure an activation energy of 1.5 eV was found. The complexity of this desorption process was denoted by the fourth order of the kinetic reaction in the 250–280 °C temperature range. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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