CD control comparison of step-and-repeat versus step-and-scan DUV lithography for sub-0.25-μm gate printing

Abstract

In this paper, the intra-field critical dimension (CD) control of a KrF step&scan and step&repeat system are investigated and compared. The scanners are expected to replace the conventional steppers in the manufacturing of integrated circuit generation of 0.18 micrometer and beyond, because of the larger field size and the intrinsic improvement in intra- field CD and overlay control using comparable lens design, complexity and cost. The work has been focused on sub-0.25 micrometer critical dimensions. A reticle design for both top- down CD measurements and electrical linewidth probing has allowed massive data collection and investigation of the impact of the metrology technique in CD control studies. From this study, it can be concluded that the stepper and scanner exhibit similar CD control at best focus, but the scanner improves the CD control of the stepper if the considered focus range increases. The CD control is governed by the reticle CD non-uniformity. Focus budget calculations indicate that reticle CD ranges of 40 nm (4x) are needed to bring the CD control of 0.2 micrometer grouped lines within acceptable ranges for realistic gate levels. For isolated lines, dedicated deep-UV resists and resolution enhancement techniques will be needed on top of this to obtain similar CD control.