Abstract
A new algorithm is presented that evaluates the critical dimension (CD) of nanostructures from scanning electron microscopy (SEM) images. The algorithm is based on the physical modelling of the SEM image formation and evaluates both top and bottom CDs. The SEM intensity profile is modelled by a piecewise-defined continuous function which is approximated to the measured profile extracted from images by means of a least-squares fit. The algorithm is tested in a series of Monte Carlo simulations with respect to a variation of the edge-slope angle and the electron probe diameter. The maximum deviation between the modelled and the simulated top and bottom CDs is smaller than 3 nm. As an application example, measurements of silicon line structures are presented.
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